EUV Source
Extreme Energy-Density Research Institute (EDI), Nagaoka University of Technology

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Development of Extreme Ultraviolet (EUV) Source


   Development of high-power extreme ultraviolet (EUV) source is required by semiconductor lithography process. It is commonly realized that EUV is generated from high-temperature, high-density plasma which can be obtained by pulsed high-current discharge. In our institute, pulsed high-current generator has been developed for EUV source applications. It combines semiconductor switches with magnetic pulse compression in order to obtain repetitive operation and high-current capability. EUV source studies are being carried out by using this high-current generator.

Pulsed high-current generator for EUV source development

 

 

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Last updated: July 1, 2004

 

Your questions are welcome at: kyokugen@etigo.nagaokaut.ac.jp
Extreme Energy-Density Research Institute
Nagaoka University of Technology
Nagaoka, Niigata 940-2188, Japan
TEL: 0258-47-9891     FAX: 0258-47-9890